 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK3594-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol VDS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Ratings 200 170 45 180 30 45 258.9 20 5 2.02 270 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W C C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=205H, Vcc=48V,Tc=25C, See to avalanche Energy Graph *2 Tch <150C = *3 IF< -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C *4 VDS < 200V *5 VGS=-30V = = = = www..com Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Electrical characteristics (Tc =25C unless otherwise specified) Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=200V VGS=0V VDS=160V VGS=0V VGS=30V VDS=0V ID=15A VGS=10V ID=15A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V RGS=10 VCC=100V ID=30A VGS=10V L=205H Tch=25C IF=30A VGS=0V Tch=25C IF=30A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C Min. 200 3.0 Typ. Max. 5.0 25 250 100 66 Units V V A nA m S pF 10 50 12.5 25 1960 2940 260 390 18 27 20 30 17 26 53 80 19 29 51 76.5 15 22.5 16 24 45 1.10 1.65 0.19 1.4 ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.463 62.0 Units C/W C/W www.fujielectric.co.jp/denshi/scd 1 2SK3594-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 300 800 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V 700 IAS=18A 250 600 200 500 IAS=27A IAS=45A 400 150 EAS [mJ] PD [W] 300 100 200 50 100 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 Tc [C] starting Tch [C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 120 20V 100 10V 8V 80 7.5V 10 100 Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C ID [A] 60 7.0V 40 6.5V 6.0V VGS=5.5V ID[A] 1 www..com 20 0.1 12 0 1 2 3 4 5 6 7 8 9 10 0 0 2 4 6 8 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 0.20 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 0.15 VGS= 6.0V 5.5V 6.5V 7.0V RDS(on) [ ] 10 7.5V 8V 0.10 10V 20V gfs [S] 1 0.05 0.1 0.1 0.00 1 10 100 0 20 40 60 80 100 120 ID [A] ID [A] 2 2SK3594-01 FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=15A,VGS=10V 200 180 160 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A RDS(on) [ m ] VGS(th) [V] 140 120 100 80 60 typ. 40 20 0 -50 -25 0 25 50 75 100 125 150 max. max. 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=30A, Tch=25C 10 14 12 10 0 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss 10 Vcc= 100V VGS [V] 8 6 C [nF] Coss 10 4 -1 www..com 2 0 0 10 20 30 40 50 60 70 80 -2 Crss 10 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10 tf 2 10 10 td(off) IF [A] t [ns] td(on) 1 1 10 tr 0.1 0.00 10 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3594-01 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Single Pulse FUJI POWER MOSFET 10 2 Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 -3 www..com 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4 |
Price & Availability of K3594-01
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |